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Micron Technology Inc. MT40A1G8WE-083E AAT:B TR — Memory (DRAM / SRAM / Flash / EEPROM)

Micron Technology Inc. MT40A1G8WE-083E AAT:B TR

MPNMT40A1G8WE-083E AAT:B TR
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MT40A1G8WE-083E AAT:B TR specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.14V ~ 1.26V
Clock frequency1.2 GHz
Memory interfaceParallel
Operating temperature-40°C ~ 105°C (TC)
GradeAutomotive
PackageTape & Reel (TR)
TechnologySDRAM - DDR4
Memory size8Gbit
Memory formatDRAM
QualificationAEC-Q100
Case78-TFBGA
Memory organization1G x 8