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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SS8550-D-AP specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown25 V
Current - collector (Ic)1.5 A
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce160 @ 100mA, 1V
Power - max1 W
Frequency - transition190MHz
Operating temperature-55°C~150°C(TJ)
PackageTape & Box (TB)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic800mV @ 80mA, 800mA