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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DTC114ESA-BP specifications
ParameterValue
MountingThrough Hole
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max300 mW
Frequency - transition250 MHz
PackageBulk
CaseTO-226-3, TO-92-3 Short Body
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA