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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC1959-O-AP specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown30 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 100mA, 1V
Power - max500 mW
Frequency - transition300MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA