Skip to main content
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC1008-G-AP specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown60 V
Current - collector (Ic)700 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 50mA, 2V
Power - max800 mW
Frequency - transition30MHz
PackageTape & Box (TB)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic400mV @ 50mA, 500mA