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Micro Commercial Co 2N7000-AP — Discrete Semiconductors

Micro Commercial Co 2N7000-AP

MPN2N7000-AP
Obsolete
$0.4500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N7000-AP specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C220mA (Ta)
Power dissipation625mW (Ta)
Operating temperature-55°C ~ 150°C
PackageTape & Box (TB)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds60 pF @ 25 V