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Kioxia America, Inc. TH58NYG2S3HBAI4 — Memory (DRAM / SRAM / Flash / EEPROM)

Kioxia America, Inc. TH58NYG2S3HBAI4

MPNTH58NYG2S3HBAI4
Active

IC FLASH 4GBIT PARALLEL 63BGA

$7.24Ref. price · indicative, final on quote
Packaging63-BGA
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TH58NYG2S3HBAI4 specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Voltage1.7V ~ 1.95V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologyFLASH - NAND (SLC)
Memory size4Gbit
Memory formatFLASH
Case63-BGA
Memory organization512M x 8
Write cycle time - word, page25ns