IXTX210P10T
IXYS · TrenchP™ Series
MOSFET P-CH 100V 210A PLUS247-3
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchP™ |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 210A (Tc) |
| Power dissipation | 1040W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 Variant |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 7.5mOhm @ 105A, 10V |
| Gate charge (Qg) (Max) @ vgs | 740 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 69500 pF @ 25 V |
IXTX210P10T
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