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IXYS IXTX200N10L2

IXYS IXTX200N10L2

MPNIXTX200N10L2
Active

MOSFET N-CH 100V 200A PLUS247-3

$34.77Ref. price · indicative, final on quote
PackagingTO-247-3 Variant
RoHSROHS3 Compliant
SeriesLinear L2™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTX200N10L2 specifications
ParameterValue
SeriesLinear L2™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C200A (Tc)
Power dissipation1040W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3 Variant
Vgs(th) (Max) @ id4.5V @ 3mA
Rds on (Max) @ id, vgs11mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs540 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 25 V