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IXYS IXTT6N120

IXYS IXTT6N120

MPNIXTT6N120
Active

MOSFET N-CH 1200V 6A TO268

$12.73Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTT6N120 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBox
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs2.6Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 25 V