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IXYS IXTT2N170D2

IXYS IXTT2N170D2

MPNIXTT2N170D2
Active

MOSFET N-CH 1700V 2A TO268

$26.16Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTT2N170D2 specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1700 V
Current - continuous drain (Id) @ 25°C2A (Tj)
Power dissipation568W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Rds on (Max) @ id, vgs6.5Ohm @ 1A, 0V
Gate charge (Qg) (Max) @ vgs110 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds3650 pF @ 25 V