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IXYS IXTT20P50P

IXYS IXTT20P50P

MPNIXTT20P50P
Active

MOSFET P-CH 500V 20A TO268

$13.13Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
RoHSROHS3 Compliant
SeriesPolarP™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTT20P50P specifications
ParameterValue
SeriesPolarP™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation460W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs103 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5120 pF @ 25 V