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IXYS IXTT1N450HV

IXYS IXTT1N450HV

MPNIXTT1N450HV
Active

MOSFET N-CH 4500V 1A TO268

$51.77Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTT1N450HV specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage4500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation520W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ id6.5V @ 250µA
Rds on (Max) @ id, vgs85Ohm @ 50mA, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1730 pF @ 25 V