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IXYS IXTQ69N30P

IXYS IXTQ69N30P

MPNIXTQ69N30P
Active

MOSFET N-CH 300V 69A TO3P

$11.46Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
SeriesPolar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTQ69N30P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C69A (Tc)
Power dissipation500W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs49mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4960 pF @ 25 V