IXTQ50N20P

IXYS · Polar Series

MOSFET N-CH 200V 50A TO3P

IXYS IXTQ50N20P
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Technical specifications

IXTQ50N20P specifications
Parameter / AttributeSpecification / Value
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation360W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2720 pF @ 25 V
IXTQ50N20P
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