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IXYS IXTQ36N50P

IXYS IXTQ36N50P

MPNIXTQ36N50P
Active

MOSFET N-CH 500V 36A TO3P

$10.76Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
SeriesPolar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTQ36N50P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation540W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs170mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5500 pF @ 25 V