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IXYS IXTQ30N60L2

IXYS IXTQ30N60L2

MPNIXTQ30N60L2
Active

MOSFET N-CH 600V 30A TO3P

$19.37Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
SeriesLinear L2™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTQ30N60L2 specifications
ParameterValue
SeriesLinear L2™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation540W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs240mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs335 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10700 pF @ 25 V