IXTQ26N50P

IXYS · Polar Series

MOSFET N-CH 500V 26A TO3P

IXYS IXTQ26N50P
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Technical specifications

IXTQ26N50P specifications
Parameter / AttributeSpecification / Value
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation400W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3600 pF @ 25 V
IXTQ26N50P
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