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IXYS IXTQ14N60P

IXYS IXTQ14N60P

MPNIXTQ14N60P
Active

MOSFET N-CH 600V 14A TO3P

$5.34Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
SeriesPolar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTQ14N60P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs550mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 25 V