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IXYS IXTP64N10L2

IXYS IXTP64N10L2

MPNIXTP64N10L2
Active

MOSFET N-CH 100V 64A TO220AB

$47.41992Price · pay online now
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$47.42 / ea

1 in stock — maximum per order · 3–4 days lead time

PackagingTO-220-3
RoHSROHS3 Compliant
SeriesLinear L2™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IXTP64N10L2 specifications
ParameterValue
SeriesLinear L2™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C64A (Tc)
Power dissipation357W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 32A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3620 pF @ 25 V