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IXYS IXTP50N25T

IXYS IXTP50N25T

MPNIXTP50N25T
Active

MOSFET N-CH 250V 50A TO220AB

$5.3Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesTrench
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP50N25T specifications
ParameterValue
SeriesTrench
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation400W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs50mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs78 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4000 pF @ 25 V