IXTP4N65X2
IXYS · Ultra X2 Series
MOSFET N-CH 650V 4A TO220
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | Ultra X2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 850mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 455 pF @ 25 V |
IXTP4N65X2
[ALLOC] verified