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IXYS IXTP3N50D2

IXYS IXTP3N50D2

MPNIXTP3N50D2
Active

MOSFET N-CH 500V 3A TO220AB

$3.89Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP3N50D2 specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-220-3
Rds on (Max) @ id, vgs1.5Ohm @ 1.5A, 0V
Gate charge (Qg) (Max) @ vgs40 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1070 pF @ 25 V