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IXYS IXTP32P20T

IXYS IXTP32P20T

MPNIXTP32P20T
Active

MOSFET P-CH 200V 32A TO220AB

$8.93Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesTrenchP™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP32P20T specifications
ParameterValue
SeriesTrenchP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs185 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14500 pF @ 25 V