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IXYS IXTP2N100P

IXYS IXTP2N100P

MPNIXTP2N100P
Active

MOSFET N-CH 1000V 2A TO220AB

$3.39Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesPolar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP2N100P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation86W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs7.5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs24.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds655 pF @ 25 V