Skip to main content
IXYS IXTP24N65X2M

IXYS IXTP24N65X2M

MPNIXTP24N65X2M
Active

MOSFET N-CH 650V 24A TO220

$4.7Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSROHS3 Compliant
SeriesUltra X2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP24N65X2M specifications
ParameterValue
SeriesUltra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack, Isolated Tab
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs145mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2060 pF @ 25 V