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IXYS IXTP20N65X2

IXYS IXTP20N65X2

MPNIXTP20N65X2
Active

MOSFET N-CH 650V 20A TO220AB

$5.05Ref. price · indicative, final on quote
PackagingTO-220-3
SeriesUltra X2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP20N65X2 specifications
ParameterValue
SeriesUltra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation290W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs185mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1450 pF @ 25 V