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IXYS IXTP1R4N120P

IXYS IXTP1R4N120P

MPNIXTP1R4N120P
Active

MOSFET N-CH 1200V 1.4A TO220AB

$5.42Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesPolar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP1R4N120P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.4A (Tc)
Power dissipation86W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs13Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs24.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds666 pF @ 25 V