IXTP1N100P

IXYS · Polar Series

MOSFET N-CH 1000V 1A TO220AB

IXYS IXTP1N100P
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Technical specifications

IXTP1N100P specifications
Parameter / AttributeSpecification / Value
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs15Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs15.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds331 pF @ 25 V
IXTP1N100P
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