IXYS IXTP1N100P
MPNIXTP1N100P
Active
MOSFET N-CH 1000V 1A TO220AB
$2.91Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesPolar
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Polar |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1A (Tc) |
| Power dissipation | 50W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 15Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 15.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 331 pF @ 25 V |