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IXYS IXTP18P10T

IXYS IXTP18P10T

MPNIXTP18P10T
Active

MOSFET P-CH 100V 18A TO220AB

$2.77Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesTrenchP™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP18P10T specifications
ParameterValue
SeriesTrenchP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs120mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 25 V