IXYS IXTP120N20X4
MPNIXTP120N20X4
Active
MOSFET
$8.58Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 417W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 9.5mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 108 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6100 pF @ 25 V |