IXTP01N100D
IXYS · Depletion Series
MOSFET N-CH 1000V 400MA TO220AB
[IN STOCK] In Stock: 4 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | Depletion |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 0V |
| Current - continuous drain (Id) @ 25°C | 400mA (Tc) |
| Power dissipation | 1.1W (Ta), 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Depletion Mode |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 25µA |
| Rds on (Max) @ id, vgs | 80Ohm @ 50mA, 0V |
| Gate charge (Qg) (Max) @ vgs | 5.8 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 100 pF @ 25 V |
IXTP01N100D
[ALLOC] verified