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IXYS IXTN32P60P

IXYS IXTN32P60P

MPNIXTN32P60P
Active

MOSFET P-CH 600V 32A SOT227B

$37.73Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesPolarP™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTN32P60P specifications
ParameterValue
SeriesPolarP™
FET typeP-Channel
MountingChassis Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation890W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs350mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs196 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11100 pF @ 25 V