IXTN200N10L2

IXYS · Linear L2™ Series

MOSFET N-CH 100V 178A SOT227B

IXYS IXTN200N10L2
[IN STOCK] In Stock: 8 pcs
$40.01/ pc

Volume pricing

Buy Now

MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IXTN200N10L2 specifications
Parameter / AttributeSpecification / Value
SeriesLinear L2™
FET typeN-Channel
MountingChassis Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C178A (Tc)
Power dissipation830W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id4.5V @ 3mA
Rds on (Max) @ id, vgs11mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs540 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 25 V
IXTN200N10L2
[ALLOC] verified
Quote