Skip to main content
IXYS IXTN200N10L2

IXYS IXTN200N10L2

MPNIXTN200N10L2
Active

MOSFET N-CH 100V 178A SOT227B

$50.34Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesLinear L2™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTN200N10L2 specifications
ParameterValue
SeriesLinear L2™
FET typeN-Channel
MountingChassis Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C178A (Tc)
Power dissipation830W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id4.5V @ 3mA
Rds on (Max) @ id, vgs11mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs540 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 25 V