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IXYS IXTN110N20L2

IXYS IXTN110N20L2

MPNIXTN110N20L2
Active

MOSFET N-CH 200V 100A SOT227B

$50.34Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesLinear L2™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTN110N20L2 specifications
ParameterValue
SeriesLinear L2™
FET typeN-Channel
MountingChassis Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation735W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id4.5V @ 3mA
Rds on (Max) @ id, vgs24mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs500 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 25 V