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IXYS IXTN102N65X2

IXYS IXTN102N65X2

MPNIXTN102N65X2
Active

MOSFET N-CH 650V 76A SOT227

$34.6Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
RoHSROHS3 Compliant
SeriesUltra X2
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTN102N65X2 specifications
ParameterValue
SeriesUltra X2
FET typeN-Channel
MountingChassis Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C76A (Tc)
Power dissipation595AW (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 51A, 10V
Gate charge (Qg) (Max) @ vgs152 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10900 pF @ 25 V