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IXYS IXTK5N250

IXYS IXTK5N250

MPNIXTK5N250
Active

MOSFET N-CH 2500V 5A TO264

$66.5Ref. price · indicative, final on quote
PackagingTO-264-3, TO-264AA
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTK5N250 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage2500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation960W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs8.8Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8560 pF @ 25 V