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IXYS IXTK200N10P

IXYS IXTK200N10P

MPNIXTK200N10P
Active

MOSFET N-CH 100V 200A TO264

$15.41Ref. price · indicative, final on quote
PackagingTO-264-3, TO-264AA
RoHSROHS3 Compliant
SeriesPolar
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTK200N10P specifications
ParameterValue
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C200A (Tc)
Power dissipation800W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id5V @ 500µA
Rds on (Max) @ id, vgs7.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7600 pF @ 25 V