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IXYS IXTH80N20L

IXYS IXTH80N20L

MPNIXTH80N20L
Active

MOSFET N-CH 200V 80A TO247

$14.61Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesLinear
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH80N20L specifications
ParameterValue
SeriesLinear
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation520W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6160 pF @ 25 V