Skip to main content
IXYS IXTH76P10T

IXYS IXTH76P10T

MPNIXTH76P10T
Active

MOSFET P-CH 100V 76A TO247

$7.8Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesTrenchP™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH76P10T specifications
ParameterValue
SeriesTrenchP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C76A (Tc)
Power dissipation298W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs197 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13700 pF @ 25 V