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IXYS IXTH60N20X4

IXYS IXTH60N20X4

MPNIXTH60N20X4
Active

MOSFET ULTRA X4 200V 60A TO-247

$11.5Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH60N20X4 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs21mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2450 pF @ 25 V