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IXYS IXTH52P10P

IXYS IXTH52P10P

MPNIXTH52P10P
Active

MOSFET P-CH 100V 52A TO247

$8.16Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesPolarP™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH52P10P specifications
ParameterValue
SeriesPolarP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C52A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 52A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2845 pF @ 25 V