IXTH48P20P

IXYS · PolarP™ Series

MOSFET P-CH 200V 48A TO247

IXYS IXTH48P20P
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Technical specifications

IXTH48P20P specifications
Parameter / AttributeSpecification / Value
SeriesPolarP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation462W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs85mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs103 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5400 pF @ 25 V
IXTH48P20P
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