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IXYS IXTH26P20P

IXYS IXTH26P20P

MPNIXTH26P20P
Active

MOSFET P-CH 200V 26A TO247

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$8.91 / ea

10 in stock — maximum per order · 3–4 days lead time

$7.81 / ea from 10 pcs

PackagingTO-247-3
RoHSROHS3 Compliant
SeriesPolarP™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IXTH26P20P specifications
ParameterValue
SeriesPolarP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs170mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2740 pF @ 25 V