IXTH24P20
IXYS
MOSFET P-CH 200V 24A TO247
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 150 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4200 pF @ 25 V |
IXTH24P20
[ALLOC] verified