IXYS IXTH200N10T
MPNIXTH200N10T
Active
MOSFET N-CH 100V 200A TO247
$9.41Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesTrench
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Trench |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Tc) |
| Power dissipation | 550W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 5.5mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 152 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9400 pF @ 25 V |