IXTH1N200P3HV

IXYS · Polar P3™ Series

MOSFET N-CH 2000V 1A TO247HV

IXYS IXTH1N200P3HV
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Technical specifications

IXTH1N200P3HV specifications
Parameter / AttributeSpecification / Value
SeriesPolar P3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage2000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3 Variant
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs40Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs23.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds646 pF @ 25 V
IXTH1N200P3HV
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