IXTH16N50D2

IXYS · Depletion Series

MOSFET N-CH 500V 16A TO247-3

IXYS IXTH16N50D2
[IN STOCK] In Stock: 2 pcs
$23.42/ pc

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Technical specifications

IXTH16N50D2 specifications
Parameter / AttributeSpecification / Value
SeriesDepletion
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)0V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation695W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-247-3
Rds on (Max) @ id, vgs240mOhm @ 8A, 0V
Gate charge (Qg) (Max) @ vgs199 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds5250 pF @ 25 V
IXTH16N50D2
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