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IXYS IXTH16N50D2

IXYS IXTH16N50D2

MPNIXTH16N50D2
Active

MOSFET N-CH 500V 16A TO247-3

$13.2Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH16N50D2 specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)0V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation695W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-247-3
Rds on (Max) @ id, vgs240mOhm @ 8A, 0V
Gate charge (Qg) (Max) @ vgs199 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds5250 pF @ 25 V