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IXYS IXTH110N25T

IXYS IXTH110N25T

MPNIXTH110N25T
Active

MOSFET N-CH 250V 110A TO247

$10.19Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesTrench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH110N25T specifications
ParameterValue
SeriesTrench
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation694W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 1mA
Rds on (Max) @ id, vgs24mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs157 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9400 pF @ 25 V