IXTA36N30P

IXYS · PolarHT™ Series

MOSFET N-CH 300V 36A TO263

IXYS IXTA36N30P
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Technical specifications

IXTA36N30P specifications
Parameter / AttributeSpecification / Value
SeriesPolarHT™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2250 pF @ 25 V
IXTA36N30P
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