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IXYS IXTA36N30P

IXYS IXTA36N30P

MPNIXTA36N30P
Active

MOSFET N-CH 300V 36A TO263

$5.14Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesPolarHT™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA36N30P specifications
ParameterValue
SeriesPolarHT™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2250 pF @ 25 V